NTD600N80S3Z บน
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NTD600N80S3Z ON
• Typ. RDS(on) = 550 m
• Ultra Low Gate Charge (Typ. Qg = 15.5 nC)
• Low Stored Energy in Output Capacitance (Eoss = 1.74 J @ 400 V)
• 100% Avalanche Tested
• ESD Improved Capability with Zener Diode
• RoHS Compliant
• Typ. RDS(on) = 550 m
• Ultra Low Gate Charge (Typ. Qg = 15.5 nC)
• Low Stored Energy in Output Capacitance (Eoss = 1.74 J @ 400 V)
• 100% Avalanche Tested
• ESD Improved Capability with Zener Diode
• RoHS Compliant
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